RFD14N05LSM9A
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- Mfr.Part #
- RFD14N05LSM9A
- Manufacturer
- Harris Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A TO252AA
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Weight :
- 260.37mg
- Threshold Voltage :
- 2V
- Voltage - Rated DC :
- 50V
- JEDEC-95 Code :
- TO-252AA
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±10V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Fall Time (Typ) :
- 16 ns
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Resistance :
- 100MOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Published :
- 2004
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 10V
- Turn On Delay Time :
- 13 ns
- Pbfree Code :
- yes
- Power Dissipation :
- 48W
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 48W Tc
- REACH SVHC :
- No SVHC
- Width :
- 6.22mm
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Element Material :
- SILICON
- Rise Time :
- 24ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 6.73mm
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 14mA
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 50V
- Height :
- 2.39mm
- Current Rating :
- 14A
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Turn-Off Delay Time :
- 42 ns
- Mount :
- Surface Mount
- Nominal Vgs :
- 2 V
- Number of Elements :
- 1
- Datasheets
- RFD14N05LSM9A
N-Channel Tape & Reel (TR) 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD14N05LSM9A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 50V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 50V.As a result of its turn-off delay time, which is 42 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (5V).
RFD14N05LSM9A Features
a continuous drain current (ID) of 14mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 42 ns
a threshold voltage of 2V
RFD14N05LSM9A Applications
There are a lot of ON Semiconductor
RFD14N05LSM9A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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