RFD14N05LSM9A

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 5V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V

Gate to Source Voltage (Vgs) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Vgs (Max) :

±10V

Drain to Source Breakdown Voltage :

50V

Width :

6.22mm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Height :

2.39mm

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Published :

2004

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Current Rating :

14A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Turn-Off Delay Time :

42 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

14mA

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

24ns

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Turn On Delay Time :

13 ns

Pbfree Code :

yes

Nominal Vgs :

2 V

Length :

6.73mm

Power Dissipation-Max :

48W Tc

ECCN Code :

EAR99

Resistance :

100MOhm

Power Dissipation :

48W

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

50V

Weight :

260.37mg

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Terminal Form :

Gull wing

Contact Plating :

Tin

Fall Time (Typ) :

16 ns