RFD14N05SM
- Mfr.Part #
- RFD14N05SM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A TO252AA
- Stock
- 25,382
- In Stock :
- 25,382
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 50V
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Power Dissipation-Max :
- 48W Tc
- Resistance :
- 100MOhm
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-252AA
- Voltage - Rated DC :
- 50V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 26ns
- Fall Time (Typ) :
- 17 ns
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 10V
- REACH SVHC :
- No SVHC
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 14mA
- Nominal Vgs :
- 4 V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 14 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Turn-Off Delay Time :
- 45 ns
- Height :
- 2.39mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Width :
- 6.22mm
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 570pF @ 25V
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Current Rating :
- 14A
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 20V
- Power Dissipation :
- 48W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 260.37mg
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Datasheets
- RFD14N05SM

N-Channel Tape & Reel (TR) 100m Ω @ 14A, 10V ±20V 570pF @ 25V 40nC @ 20V TO-252-3, DPak (2 Leads + Tab), SC-63
RFD14N05SM9A Description
The RFD14N05SM9A is an N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD14N05SM9A is designed for use in applications such as switching regulators, switching converters, and relay drivers. The transistor RFD14N05SM9A can be operated directly from integrated circuits.
RFD14N05SM9A Features
-
14A, 50V
-
rDS(ON)= 0.100Ω
-
Temperature Compensating PSPICE? Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
-
175°C Operating Temperature
RFD14N05SM9A Applications
-
Lighting
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server
-
Mainframe
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