RFD14N05L
- Mfr.Part #
- RFD14N05L
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A I-PAK
- Stock
- 7,201
- In Stock :
- 7,201
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Current Rating :
- 14A
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 50V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 48W
- Width :
- 2.5mm
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ) :
- 16 ns
- Resistance :
- 100MOhm
- Continuous Drain Current (ID) :
- 14A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tube
- Power Dissipation-Max :
- 48W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Height :
- 6.3mm
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Length :
- 6.8mm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 42 ns
- ECCN Code :
- EAR99
- Threshold Voltage :
- 2V
- Rise Time :
- 24ns
- Recovery Time :
- 125 ns
- Voltage - Rated DC :
- 50V
- Weight :
- 343.08mg
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Datasheets
- RFD14N05L

N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
RFD14N05L Description
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD14N05L Features
14A, 50V
rDS(ON) = 0.100?
Temperature Compensating PSPICE? Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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