RFD14N05L
- Mfr.Part #
- RFD14N05L
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A I-PAK
- Stock
- 7,201
- In Stock :
- 7,201
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 16 ns
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 2V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- 50V
- Power Dissipation-Max :
- 48W Tc
- Weight :
- 343.08mg
- Power Dissipation :
- 48W
- Length :
- 6.8mm
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Resistance :
- 100MOhm
- Height :
- 6.3mm
- Recovery Time :
- 125 ns
- Turn On Delay Time :
- 13 ns
- REACH SVHC :
- No SVHC
- Rise Time :
- 24ns
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs (Max) :
- ±10V
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 2.5mm
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 42 ns
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 14A
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 14A
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Datasheets
- RFD14N05L

N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
RFD14N05L Description
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD14N05L Features
14A, 50V
rDS(ON) = 0.100?
Temperature Compensating PSPICE? Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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