RFD14N05
- Mfr.Part #
- RFD14N05
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A IPAK
- Stock
- 15,126
- In Stock :
- 15,126
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.8mm
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Threshold Voltage :
- 2V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Recovery Time :
- 125 ns
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Power Dissipation :
- 48W
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 100MOhm
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ) :
- 16 ns
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 14A
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 10V
- Packaging :
- Tube
- Current Rating :
- 14A
- Width :
- 2.5mm
- Published :
- 2004
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Turn-Off Delay Time :
- 42 ns
- Voltage - Rated DC :
- 50V
- Drain to Source Breakdown Voltage :
- 50V
- Vgs (Max) :
- ±10V
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Weight :
- 343.08mg
- Transistor Element Material :
- SILICON
- Rise Time :
- 24ns
- Turn On Delay Time :
- 13 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 48W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Height :
- 6.3mm
- Number of Pins :
- 3
- Datasheets
- RFD14N05

N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
RFD14N05L Description
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD14N05L Features
14A, 50V
rDS(ON) = 0.100?
Temperature Compensating PSPICE? Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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