RFD12N06RLE

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±16V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

18A

Drain-source On Resistance-Max :

0.075Ohm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Power Dissipation-Max :

40W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Published :

2002

Surface Mount :

yes

Mounting Type :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

63m Ω @ 18A, 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Series :

UltraFET™

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99