RFD14N05

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Mfr.Part #
RFD14N05
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 50V 14A I-PAK
Stock
44,596
In Stock :
44,596

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
5V
Width :
2.5mm
Power Dissipation-Max :
48W Tc
Lead Free :
Lead Free
Number of Terminations :
3
Power Dissipation :
48W
Pbfree Code :
yes
Rise Time :
24ns
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
14A
Transistor Element Material :
SILICON
Weight :
343.08mg
Current Rating :
14A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2V @ 250μA
Threshold Voltage :
2V
Turn-Off Delay Time :
42 ns
Number of Elements :
1
Published :
2004
Rds On (Max) @ Id, Vgs :
100m Ω @ 14A, 5V
Case Connection :
DRAIN
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mount :
Through Hole
Height :
6.3mm
Fall Time (Typ) :
16 ns
Radiation Hardening :
No
Factory Lead Time :
8 Weeks
Contact Plating :
Tin
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
50V
ECCN Code :
EAR99
Resistance :
100MOhm
Turn On Delay Time :
13 ns
Vgs (Max) :
±10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
10V
FET Type :
N-Channel
Recovery Time :
125 ns
Element Configuration :
Single
JESD-609 Code :
e3
Packaging :
Tube
Voltage - Rated DC :
50V
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
670pF @ 25V
Length :
6.8mm
Mounting Type :
Through Hole
Datasheets
RFD14N05
Introducing Transistors - FETs, MOSFETs - Single onsemi RFD14N05 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, RFD14N05 pinout, RFD14N05 datasheet PDF, RFD14N05 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFD14N05 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFD14N05


N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

RFD14N05L Description

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.


RFD14N05L Features

14A, 50V

rDS(ON) = 0.100?

Temperature Compensating PSPICE? Model

Can be Driven Directly from CMOS, NMOS, and TTL Circuits

Peak Current vs Pulse Width Curve

UIS Rating Curve

175oC Operating Temperature

Related Literature

TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


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