RFD14N05

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Number of Pins :

3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Resistance :

100MOhm

Contact Plating :

Tin

Fall Time (Typ) :

16 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

10V

Length :

6.8mm

Mounting Type :

Through Hole

Mount :

Through Hole

Published :

2004

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Turn On Delay Time :

13 ns

Voltage - Rated DC :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

14A

Packaging :

Tube

FET Type :

N-Channel

Vgs (Max) :

±10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

14A Tc

REACH SVHC :

No SVHC

Element Configuration :

Single

Number of Terminations :

3

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 5V

Power Dissipation :

48W

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Threshold Voltage :

2V

Power Dissipation-Max :

48W Tc

Rise Time :

24ns

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

2.5mm

Drive Voltage (Max Rds On,Min Rds On) :

5V

Weight :

343.08mg

Height :

6.3mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

42 ns

Recovery Time :

125 ns

Drain to Source Breakdown Voltage :

50V

JESD-609 Code :

e3