RFD14N05
- Mfr.Part #
- RFD14N05
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 14A I-PAK
- Stock
- 44,596
- In Stock :
- 44,596
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Resistance :
- 100MOhm
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 16 ns
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 10V
- Length :
- 6.8mm
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Published :
- 2004
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Turn On Delay Time :
- 13 ns
- Voltage - Rated DC :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 14A
- Packaging :
- Tube
- FET Type :
- N-Channel
- Vgs (Max) :
- ±10V
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 14A
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 14A, 5V
- Power Dissipation :
- 48W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Threshold Voltage :
- 2V
- Power Dissipation-Max :
- 48W Tc
- Rise Time :
- 24ns
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 2.5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Weight :
- 343.08mg
- Height :
- 6.3mm
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 42 ns
- Recovery Time :
- 125 ns
- Drain to Source Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- Datasheets
- RFD14N05

N-Channel Tube 100m Ω @ 14A, 5V ±10V 670pF @ 25V 40nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
RFD14N05L Description
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
RFD14N05L Features
14A, 50V
rDS(ON) = 0.100?
Temperature Compensating PSPICE? Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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