RFD14N05

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

48W Tc

JESD-609 Code :

e3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Current Rating :

14A

Mounting Type :

Through Hole

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Weight :

343.08mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.8mm

Width :

2.5mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Vgs (Max) :

±10V

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Height :

6.3mm

Fall Time (Typ) :

16 ns

Published :

2004

Mount :

Through Hole

Drain to Source Breakdown Voltage :

50V

Power Dissipation :

48W

Number of Elements :

1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 5V

Transistor Application :

SWITCHING

Packaging :

Tube

Resistance :

100MOhm

Number of Terminations :

3

Turn On Delay Time :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V

Rise Time :

24ns

Recovery Time :

125 ns

Factory Lead Time :

8 Weeks

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

14A

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

Turn-Off Delay Time :

42 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA