PEMD6,115
- Mfr.Part #
- PEMD6,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS PREBIAS 1NPN 1PNP SOT666
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Package / Case :
- SOT-563, SOT-666
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- Collector Emitter Voltage (VCEO) :
- 50V
- Height :
- 6.35mm
- Pin Count :
- 6
- Operating Supply Voltage :
- 50V
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Weight :
- 4.535924g
- Base Part Number :
- P*MD6
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Min Operating Temperature :
- -65°C
- Width :
- 6.35mm
- Length :
- 6.35mm
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 1μA
- Termination :
- SMD/SMT
- Polarity :
- NPN, PNP
- Power Dissipation :
- 300mW
- Element Configuration :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 5V
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 50V
- Published :
- 2009
- Max Output Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 250µA, 5mA
- Max Power Dissipation :
- 300mW
- Resistor - Base (R1) :
- 4.7k Ω
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Datasheets
- PEMD6,115

PEMD6,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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