PEMD3,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Width :

600μm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Polarity :

NPN, PNP

Collector Base Voltage (VCBO) :

50V

Number of Pins :

6

Operating Supply Voltage :

50V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

30

Resistor - Base (R1) :

10k Ω

Package / Case :

SOT-563, SOT-666

Base Part Number :

P*MD3

Emitter Base Voltage (VEBO) :

10V

JESD-609 Code :

e3

Length :

1.7mm

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Max Power Dissipation :

300mW

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Pin Count :

6

Factory Lead Time :

4 Weeks

Max Output Current :

100mA

Number of Channels :

2

Height :

600μm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Published :

2013

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Terminal Form :

Flat