PEMB30,115
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- Mfr.Part #
- PEMB30,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2PNP PREBIAS 0.3W SOT666
- Stock
- 223,589
- In Stock ：
- 223,589
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Number of Elements :
- 2
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 300mW
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Dual
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 5V
- Base Part Number :
- MB30
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Resistor - Base (R1) :
- 2.2k Ω
- Package / Case :
- SOT-563, SOT-666
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 6
- Max Collector Current :
- 100mA
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Polarity :
- PNP
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA
- Number of Terminations :
- 6
- Factory Lead Time :
- 4 Weeks
- Min Operating Temperature :
- -65°C
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PEMB30,115
PEMB30,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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