PD85035S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Factory Lead Time :

25 Weeks

Gate to Source Voltage (Vgs) :

15V

JESD-30 Code :

R-PDSO-F2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

95W

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

AMPLIFIER

Gain :

17dB

Base Part Number :

PD85035

Voltage - Test :

13.6V

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Number of Elements :

1

Terminal Form :

Flat

Current - Test :

350mA

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

40V

Packaging :

Tube

Element Configuration :

Single

Terminal Position :

Dual

Max Output Power :

40W

JESD-609 Code :

e3

Package / Case :

PowerSO-10 Exposed Bottom Pad

Drain Current-Max (Abs) (ID) :

8A

Power - Output :

15W

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Pin Count :

10

Min Operating Temperature :

-65°C

Max Power Dissipation :

95W

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

8A

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

250

Number of Pins :

3

Radiation Hardening :

No

Frequency :

870MHz

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Mount :

Surface Mount

Current Rating :

8A