PD85035S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

8A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

3

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Max Power Dissipation :

95W

Transistor Type :

LDMOS

Gate to Source Voltage (Vgs) :

15V

Continuous Drain Current (ID) :

8A

Packaging :

Tube

Min Operating Temperature :

-65°C

Package / Case :

PowerSO-10 Exposed Bottom Pad

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

150°C

Frequency :

870MHz

Voltage - Test :

13.6V

Terminal Form :

Flat

Mount :

Surface Mount

Base Part Number :

PD85035

Current Rating :

8A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

250

Max Output Power :

40W

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PDSO-F2

Power - Output :

15W

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Power Dissipation :

95W

Case Connection :

SOURCE

Gain :

17dB

Current - Test :

350mA

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Factory Lead Time :

25 Weeks

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

10