NTMD6N02R2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Voltage - Rated DC :

20V

Number of Terminations :

8

Turn-Off Delay Time :

45 ns

Published :

2004

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Power - Max :

730mW

Continuous Drain Current (ID) :

6.5A

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

3.92A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

80 ns

JESD-609 Code :

e3

Contact Plating :

Tin

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Length :

5mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Base Part Number :

NTMD6N02

Nominal Vgs :

900 mV

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 4.5V

Factory Lead Time :

45 Weeks

Surface Mount :

yes

Rise Time :

50ns

Avalanche Energy Rating (Eas) :

360 mJ

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

12 ns

Current Rating :

6A

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 16V

Width :

4mm

Pin Count :

8

Radiation Hardening :

No

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

30A

Resistance :

35mOhm

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99