NTMD2C02R2SG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

5.2A 3.4A

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.043Ohm

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

43m Ω @ 4A, 4.5V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Power - Max :

2W

Drain to Source Voltage (Vdss) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N and P-Channel

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

5.2A

Pulsed Drain Current-Max (IDM) :

48A