NTMD4184PFR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

38 Weeks

Drain-source On Resistance-Max :

0.095Ohm

Fall Time (Typ) :

2.8 ns

Drain to Source Breakdown Voltage :

-30V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

4A

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Tin (Sn)

FET Feature :

Schottky Diode (Isolated)

Rise Time :

12ns

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 10V

Continuous Drain Current (ID) :

2.3A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

7.2 ns

Power Dissipation :

2.31W

Terminal Position :

Dual

Lead Free :

Lead Free

Turn-Off Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

95m Ω @ 3A, 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mount :

Surface Mount

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Power Dissipation-Max :

770mW Ta

Pin Count :

8