NTMD4840NR2G
- Mfr.Part #
- NTMD4840NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 4.5A 8SOIC
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Power - Max :
- 680mW
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 5ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A
- Drain Current-Max (Abs) (ID) :
- 4.5A
- Turn On Delay Time :
- 7.6 ns
- Pin Count :
- 8
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Height :
- 1.5mm
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 5.5A
- Number of Pins :
- 8
- Base Part Number :
- NTMD4840N
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 3 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 2
- ECCN Code :
- EAR99
- Factory Lead Time :
- 31 Weeks
- Width :
- 4mm
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.95W
- Max Power Dissipation :
- 800mW
- Turn-Off Delay Time :
- 17 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Lead Free :
- Lead Free
- Element Configuration :
- Dual
- JESD-609 Code :
- e3
- Published :
- 2007
- Radiation Hardening :
- No
- Length :
- 5mm
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 6.9A, 10V
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- FET Feature :
- Logic Level Gate
- Datasheets
- NTMD4840NR2G

NTMD4840NR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NTMD4840NR2G Description
In the power MOSFET, P channels are available. Its characteristics are similar to those of N-channel MOSFET. The polarity of current and voltage are in the opposite direction.
NTMD4840NR2G Features
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Dual SOIC?8 Surface Mount Package Saves Board Space
? This is a Pb?Free Device
NTMD4840NR2G Applications
? Disk Drives
? DC?DC Converters
? Printers
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