NTMD6601NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

215m Ω @ 2.2A, 10V

Drain Current-Max (Abs) (ID) :

1.1A

Drain-source On Resistance-Max :

0.215ohm

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

1.1A

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Power - Max :

600mW

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Feedback Cap-Max (Crss) :

30 pF

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Finish :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

80V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

80V