NTMD5838NLR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

23ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

7.4A

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 20V

Pulsed Drain Current-Max (IDM) :

35A

Radiation Hardening :

No

Width :

4mm

Number of Elements :

2

Height :

1.5mm

Terminal Form :

Gull wing

Fall Time (Typ) :

4 ns

Drain to Source Breakdown Voltage :

40V

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Pin Count :

8

Power Dissipation :

2.1W

Factory Lead Time :

52 Weeks

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Max Power Dissipation :

2.1W

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

17 ns

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

11 ns

Element Configuration :

Dual

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Contact Plating :

Tin

Pbfree Code :

yes

Length :

5mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 10V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount