NTMD5838NLR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

7.4A

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Terminal Form :

Gull wing

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Max Power Dissipation :

2.1W

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 10V

Transistor Element Material :

SILICON

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

35A

Factory Lead Time :

52 Weeks

Turn-Off Delay Time :

17 ns

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

4mm

Length :

5mm

Rise Time :

23ns

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Height :

1.5mm

Fall Time (Typ) :

4 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.8V

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

40V

REACH SVHC :

No SVHC

Element Configuration :

Dual

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Power Dissipation :

2.1W

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Published :

2006

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 20V