NTE247

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Surface Mount :

No

Frequency - Transition :

-

Package :

Bag

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

3V @ 120mA, 12A

Package Type :

TO-3

Mounting :

Through Hole

DC Current Gain-Min (hFE) :

100

Power Dissipation-Max (Abs) :

150 W

Number of Elements :

1

Subcategory :

Other Transistors

Operating Temperature :

-65°C ~ 200°C (TJ)

Series :

-

Power Dissipation Ambient-Max :

150 W

Emitter-Base Voltage :

5(V)

Configuration :

Single

Operating Temperature Classification :

Military

Current - Collector (Ic) (Max) :

12 A

Polarity :

NPN

DC Current Gain :

750

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Collector Current (DC) :

12(A)

Number of Terminals :

2

Current - Collector Cutoff (Max) :

1mA

Package Shape :

Round

Power - Max :

150 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 6A, 3V

Collector-Base Voltage :

100(V)

Manufacturer :

NTE Electronics

Collector-Emitter Voltage-Max :

100 V

Package / Case :

TO-204AA, TO-3

Voltage - Collector Emitter Breakdown (Max) :

100 V

JEDEC-95 Code :

TO-3

Base-Emitter Saturation Voltage (Max) :

4(V)

Reach Compliance Code :

Unknown

Rad Hardened :

No

Case Connection :

COLLECTOR

Terminal Form :

PIN/PEG

Transistor Type :

NPN - Darlington

Supplier Device Package :

TO-3

ECCN Code :

EAR99

Collector Current-Max (IC) :

12 A

Product Status :

Active

Transistor Application :

AMPLIFIER

Operating Temp Range :

-65C to 200C

Pin Count :

2 +Tab

JESD-30 Code :

O-MBFM-P2

Power Dissipation :

150(W)

Mounting Type :

Through Hole