NTE2417

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain-Min (hFE) :

50

Series :

-

Reach Compliance Code :

Unknown

Resistor - Emitter Base (R2) :

22 kOhms

Configuration :

SINGLE WITH BUILT-IN RESISTOR

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity/Channel Type :

PNP

Package :

Bag

Package Shape :

RECTANGULAR

Package / Case :

TO-236-3, SC-59, SOT-23-3

Supplier Device Package :

SOT-23

Resistor - Base (R1) :

22 kOhms

Current - Collector (Ic) (Max) :

100 mA

Voltage - Collector Emitter Breakdown (Max) :

50 V

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.2 W

Collector Current-Max (IC) :

0.1 A

Product Status :

Active

Current - Collector Cutoff (Max) :

500nA

Frequency - Transition :

200 MHz

Number of Terminals :

3

Mounting Type :

Surface Mount

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Transistor Type :

PNP - Pre-Biased

Subcategory :

BIP General Purpose Small Signal

Number of Elements :

1

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Manufacturer :

NTE Electronics

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

50 V

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Power - Max :

200 mW