NTE2417

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

22 kOhms

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

50 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Manufacturer :

NTE Electronics

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Resistor - Emitter Base (R2) :

22 kOhms

Frequency - Transition :

200 MHz

DC Current Gain-Min (hFE) :

50

Subcategory :

BIP General Purpose Small Signal

Power - Max :

200 mW

Collector-Emitter Voltage-Max :

50 V

Package :

Bag

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

-

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Power Dissipation-Max (Abs) :

0.2 W

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Terminals :

3

Polarity/Channel Type :

PNP

Collector Current-Max (IC) :

0.1 A

Reach Compliance Code :

Unknown

Number of Elements :

1

Surface Mount :

yes

Product Status :

Active

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

100 mA

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Transistor Type :

PNP - Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Supplier Device Package :

SOT-23