NTE2414

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package Shape :

RECTANGULAR

Resistor - Base (R1) :

10 kOhms

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

50 V

Power Dissipation-Max (Abs) :

0.2 W

Reach Compliance Code :

Unknown

Series :

-

HTS Code :

8541.21.00.75

Number of Elements :

1

Resistor - Emitter Base (R2) :

10 kOhms

Frequency - Transition :

250 MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200 mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

NTE Electronics

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

DC Current Gain-Min (hFE) :

50

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

Surface Mount :

yes

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

50 V

Terminal Position :

Dual

Product Status :

Active

Supplier Device Package :

SOT-23

Collector Current-Max (IC) :

0.1 A

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100 mA

Subcategory :

BIP General Purpose Small Signal

Number of Terminals :

3

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Transistor Type :

NPN - Pre-Biased

JESD-30 Code :

R-PDSO-G3