NTE2367

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

0.3 W

Package Shape :

Round

Voltage - Collector Emitter Breakdown (Max) :

50 V

Number of Terminals :

3

Surface Mount :

No

Frequency - Transition :

250 MHz

Transistor Application :

SWITCHING

Transistor Type :

NPN - Pre-Biased

Collector Current-Max (IC) :

0.1 A

Current - Collector Cutoff (Max) :

500nA

Supplier Device Package :

TO-92S

Manufacturer :

NTE Electronics

JESD-30 Code :

O-PBCY-T3

Number of Elements :

1

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN RESISTOR

DC Current Gain-Min (hFE) :

30

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Reach Compliance Code :

Unknown

Package / Case :

TO-226-3, TO-92-3 Short Body

Subcategory :

Other Transistors

Terminal Position :

BOTTOM

Collector-Emitter Voltage-Max :

50 V

Package :

Bag

Product Status :

Active

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

NPN

Additional Feature :

DIGITAL, BUILT IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA, 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Series :

-

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Resistor - Emitter Base (R2) :

4.7 kOhms

Resistor - Base (R1) :

4.7 kOhms

Current - Collector (Ic) (Max) :

100 mA

Power - Max :

300 mW

Pin Count :

3