NTE2367

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminals :

3

Package Shape :

Round

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA, 5V

Qualification Status :

Not Qualified

Subcategory :

Other Transistors

Product Status :

Active

Collector Current-Max (IC) :

0.1 A

Polarity/Channel Type :

NPN

Pin Count :

3

Transistor Type :

NPN - Pre-Biased

Collector-Emitter Voltage-Max :

50 V

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

NTE Electronics

Resistor - Emitter Base (R2) :

4.7 kOhms

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Additional Feature :

DIGITAL, BUILT IN BIAS RESISTOR

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

100 mA

DC Current Gain-Min (hFE) :

30

Frequency - Transition :

250 MHz

Surface Mount :

No

Series :

-

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 Short Body

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power - Max :

300 mW

Power Dissipation-Max (Abs) :

0.3 W

Supplier Device Package :

TO-92S

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

JESD-30 Code :

O-PBCY-T3

Resistor - Base (R1) :

4.7 kOhms