NTE2359

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

300 mW

RoHS :

Compliant

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Package / Case :

TO-226-3, TO-92-3 Short Body

Resistor - Base (R1) :

47 kOhms

Qualification Status :

Not Qualified

Subcategory :

BIP General Purpose Small Signal

JESD-30 Code :

O-PBCY-T3

Height :

12.7 mm

Package :

Bag

Manufacturer :

NTE Electronics

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

500nA

Mount :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

50 V

Max Collector Current :

200 mA

Collector Current-Max (IC) :

0.1 A

Transistor Element Material :

SILICON

Package Shape :

Round

Reach Compliance Code :

Unknown

HTS Code :

8541.21.00.75

Terminal Position :

BOTTOM

Weight :

7.257478 g

Current - Collector (Ic) (Max) :

100 mA

Terminal Form :

THROUGH-HOLE

Polarity :

NPN

Max Operating Temperature :

150 °C

Polarity/Channel Type :

NPN

Min Operating Temperature :

-55 °C

Pin Count :

3

Element Configuration :

Single

DC Current Gain-Min (hFE) :

50

Width :

76.2 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Number of Pins :

3

Number of Terminals :

3

Transistor Type :

NPN - Pre-Biased

Supplier Device Package :

TO-92S

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Power Dissipation-Max (Abs) :

0.3 W

Series :

-

Product Status :

Active

Length :

152.4 mm

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Frequency - Transition :

250 MHz

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Surface Mount :

No

Resistor - Emitter Base (R2) :

47 kOhms

Collector-Emitter Voltage-Max :

50 V

Number of Elements :

1