NTE2356

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Typical Resistor Ratio :

1

Package :

Bag

HTS Code :

8541.21.00.75

Transistor Type :

PNP - Pre-Biased

Supplier Device Package :

TO-92S

Number of Terminals :

3

DC Current Gain :

50

Polarity/Channel Type :

PNP

Type :

PNP

Resistor - Base (R1) :

10 kOhms

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

0.3 W

Qualification Status :

Not Qualified

Emitter-Collector Voltage (Max) :

50(V)

Power - Max :

300 mW

Power Dissipation :

0.3(W)

Resistor - Emitter Base (R2) :

10 kOhms

Package Shape :

Round

Current - Collector Cutoff (Max) :

500nA

Configuration :

Single

Frequency - Transition :

200 MHz

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

Product Status :

Active

Series :

-

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Subcategory :

BIP General Purpose Small Signal

Number of Elements :

1

Terminal Position :

BOTTOM

ECCN Code :

EAR99

JESD-30 Code :

O-PBCY-T3

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Current - Collector (Ic) (Max) :

100 mA

Collector Current (DC) :

0.2(A)

DC Current Gain-Min (hFE) :

50

Collector-Emitter Voltage-Max :

50 V

Reach Compliance Code :

Unknown

Voltage - Collector Emitter Breakdown (Max) :

50 V

Package / Case :

TO-226-3, TO-92-3 Short Body

Package Type :

TO-92

Collector Current-Max (IC) :

0.1 A

Pin Count :

3