NTE2355

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Power - Max :

300 mW

Package Shape :

Round

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Number of Elements :

1

Package / Case :

TO-226-3, TO-92-3 Short Body

Collector Current-Max (IC) :

0.1 A

Frequency - Transition :

250 MHz

Polarity/Channel Type :

NPN

Package :

Bag

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

50 V

Series :

-

JESD-30 Code :

O-PBCY-T3

Product Status :

Active

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

NTE Electronics

Terminal Form :

THROUGH-HOLE

Resistor - Base (R1) :

10 kOhms

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

0.3 W

Supplier Device Package :

TO-92S

Number of Terminals :

3

Transistor Type :

NPN - Pre-Biased

Subcategory :

BIP General Purpose Small Signal

Resistor - Emitter Base (R2) :

10 kOhms

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

50

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Transistor Application :

SWITCHING