NTE2330

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

3V @ 20mA, 1A

Power - Max :

80 W

Product Status :

Active

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

55 V

Current - Collector (Ic) (Max) :

4 A

JESD-30 Code :

R-PSFM-T3

Series :

-

Transistor Application :

AMPLIFIER

Configuration :

SINGLE WITH BUILT-IN DIODE

Collector-Emitter Voltage-Max :

45 V

Mounting Type :

Through Hole

Manufacturer :

NTE Electronics

Mount :

Through Hole

Operating Temperature :

150°C (TJ)

Max Operating Temperature :

150 °C

DC Current Gain-Min (hFE) :

500

Collector Base Voltage (VCBO) :

55 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 500mA, 5V

Power Dissipation Ambient-Max :

80 W

Case Connection :

COLLECTOR

RoHS :

Compliant

Emitter Base Voltage (VEBO) :

5 V

Supplier Device Package :

TO-3P

Pin Count :

2

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

4 A

Number of Pins :

3

Terminal Position :

Single

Reach Compliance Code :

Unknown

Polarity/Channel Type :

NPN

Package :

Bag

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Number of Terminals :

3

Min Operating Temperature :

-55 °C

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Transistor Type :

NPN

Max Collector Current :

20 A

Frequency - Transition :

-

Subcategory :

Other Transistors

Current - Collector Cutoff (Max) :

-

Voltage - Collector Emitter Breakdown (Max) :

55 V

Power Dissipation-Max (Abs) :

80 W

Package / Case :

TO-3P-3, SC-65-3