NTE195A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Pin Count :

3

Type :

NPN

Power Gain :

10(MIN)(dB)

Package Shape :

Round

Current - Collector (Ic) (Max) :

1.5A

Package Type :

TO-39

Transistor Type :

NPN

Frequency - Transition :

-

Product Status :

Active

Terminal Position :

BOTTOM

Package / Case :

TO-205AD, TO-39-3 Metal Can

Power Dissipation-Max (Abs) :

8 W

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

8 W

Surface Mount :

No

Power - Max :

8W

Subcategory :

Other Transistors

HTS Code :

8541.29.00.75

Supplier Device Package :

TO-39

JESD-30 Code :

O-MBCY-W3

Manufacturer :

NTE Electronics

Polarity/Channel Type :

NPN

Configuration :

Single

Operating Temperature :

-

Mounting Type :

Through Hole

Package :

Bag

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

70V

Collector-Base Voltage :

70(V)

DC Current Gain-Min (hFE) :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA, 2V

Operating Temp Range :

-65C to 200C

Number of Elements :

1

Collector Current (DC) :

1.5(A)

Series :

-

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

1.5 A

Terminal Form :

Wire

Reach Compliance Code :

Unknown

Gain :

10dB

Transistor Application :

AMPLIFIER

Emitter-Base Voltage :

3(V)

Number of Terminals :

3

JEDEC-95 Code :

TO-39

Noise Figure (dB Typ @ f) :

-

Power Dissipation :

8(W)