NTE195A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain-Min (hFE) :

30

Gain :

10dB

Series :

-

Operating Temperature :

-

Power Dissipation-Max (Abs) :

8 W

Supplier Device Package :

TO-39

Power Gain :

10(MIN)(dB)

Package Shape :

Round

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Power - Max :

8W

Package / Case :

TO-205AD, TO-39-3 Metal Can

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Terminal Form :

Wire

JESD-30 Code :

O-MBCY-W3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-39

Type :

NPN

Power Dissipation :

8(W)

Voltage - Collector Emitter Breakdown (Max) :

70V

Terminal Position :

BOTTOM

Transistor Application :

AMPLIFIER

Package :

Bag

Emitter-Base Voltage :

3(V)

Collector-Base Voltage :

70(V)

Frequency - Transition :

-

Number of Terminals :

3

Number of Elements :

1

Transistor Type :

NPN

Configuration :

Single

Surface Mount :

No

Product Status :

Active

Manufacturer :

NTE Electronics

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA, 2V

Collector Current (DC) :

1.5(A)

Operating Temp Range :

-65C to 200C

Collector Current-Max (IC) :

1.5 A

Noise Figure (dB Typ @ f) :

-

Power Dissipation Ambient-Max :

8 W

Current - Collector (Ic) (Max) :

1.5A

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Pin Count :

3

Subcategory :

Other Transistors

Package Type :

TO-39