NTE108-1

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

HTS Code :

8541.21.00.75

DC Current Gain-Min (hFE) :

20

Collector Current-Max (IC) :

0.05 A

Subcategory :

Other Transistors

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Power - Max :

625mW

Pin Count :

3

Surface Mount :

No

Number of Terminals :

3

Reach Compliance Code :

Unknown

Terminal Form :

Wire

Power Dissipation-Max (Abs) :

0.625 W

Frequency - Transition :

600MHz

Gain :

15dB

Number of Elements :

1

Package :

Bag

Operating Temperature :

-55°C ~ 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Series :

-

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Package Shape :

Round

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

15 V

Voltage - Collector Emitter Breakdown (Max) :

15V

Manufacturer :

NTE Electronics

Polarity/Channel Type :

NPN

Configuration :

Single

Product Status :

Active

Current - Collector (Ic) (Max) :

50mA

Transistor Type :

NPN

JEDEC-95 Code :

TO-106

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

JESD-30 Code :

O-PBCY-W3

Package / Case :

TO-106-3 Domed

Supplier Device Package :

TO-106