NTE108-1

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Series :

-

Frequency - Transition :

600MHz

Package / Case :

TO-106-3 Domed

Subcategory :

Other Transistors

Pin Count :

3

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Product Status :

Active

Power Dissipation-Max (Abs) :

0.625 W

Package Shape :

Round

Configuration :

Single

Qualification Status :

Not Qualified

Terminal Form :

Wire

HTS Code :

8541.21.00.75

Current - Collector (Ic) (Max) :

50mA

Package :

Bag

Collector Current-Max (IC) :

0.05 A

DC Current Gain-Min (hFE) :

20

Transistor Type :

NPN

JEDEC-95 Code :

TO-106

Manufacturer :

NTE Electronics

Number of Elements :

1

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Surface Mount :

No

Reach Compliance Code :

Unknown

JESD-30 Code :

O-PBCY-W3

Power - Max :

625mW

Collector-Emitter Voltage-Max :

15 V

Number of Terminals :

3

Gain :

15dB

Supplier Device Package :

TO-106

Transistor Element Material :

SILICON