NTE102A
- Mfr.Part #
- NTE102A
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-1-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 1A TO1
- Stock
- 68
- In Stock :
- 68
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-1
- Height :
- 10.3886 mm
- Power - Max :
- 650 mW
- JESD-30 Code :
- O-MBCY-W3
- Terminal Position :
- BOTTOM
- Collector Current (DC) :
- 1(A)
- Output Power :
- Not Required(W)
- Vce Saturation (Max) @ Ib, Ic :
- 170mV @ 50mA, 500mA
- Category :
- Bipolar Small Signal
- Configuration :
- Single
- Supplier Device Package :
- TO-1
- Collector Emitter Voltage (VCEO) :
- 10 V
- Product Status :
- Active
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 10 V
- DC Current Gain-Min (hFE) :
- 69
- Collector Base Voltage (VCBO) :
- 32 V
- Mounting Type :
- Through Hole
- Emitter-Base Voltage :
- 10(V)
- Number of Pins :
- 3
- Pin Count :
- 3
- Min Operating Temperature :
- -55 °C
- Number of Terminals :
- 3
- Operating Temp Range :
- -55C TO 90C
- Transistor Polarity :
- PNP
- Package Shape :
- Round
- Package Type :
- TO-1
- Qualification Status :
- Not Qualified
- Max Operating Temperature :
- 90 °C
- Frequency - Transition :
- -
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Package :
- Bag
- ECCN Code :
- EAR99
- Length :
- 152.4 mm
- Operating Temperature Classification :
- Industrial
- Rad Hardened :
- No
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 1 A
- Collector Current-Max (IC) :
- 1 A
- Weight :
- 7.257478 g
- Terminal Form :
- Wire
- Transistor Element Material :
- GERMANIUM
- Package / Case :
- TO-1-3 Metal Can
- Mount :
- Through Hole
- Subcategory :
- Other Transistors
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 1 A
- Manufacturer :
- NTE Electronics
- Schedule B :
- 8541210080, 8541210080/8541210080/8541210080/8541210080/8541210080
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 69 @ 300mA, 0V
- Power Dissipation-Max (Abs) :
- 0.9 W
- Operating Temperature :
- 90°C (TJ)
- Width :
- 76.2 mm
- Current Rating :
- 1 A
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 170 mV
- Collector-Base Voltage :
- 32(V)
- Mounting :
- Through Hole
- RoHS :
- Compliant
- Surface Mount :
- No
- Power Dissipation :
- 0.65(W)
- Max Power Dissipation :
- 650 mW
- Current - Collector Cutoff (Max) :
- 25μA (ICBO)
- Collector-Emitter Voltage-Max :
- 32 V
- Polarity/Channel Type :
- PNP
- Diameter :
- 6.09 mm
- Datasheets
- NTE102A

NTE102A datasheet pdf and Discrete Semiconductor Products product details from NTE Electronics, Inc. stock available at
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