NDS9956A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Row Spacing :

6.3 mm

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 10V

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

21 ns

Termination :

SMD/SMT

Continuous Drain Current (ID) :

3.7A

REACH SVHC :

No SVHC

Number of Elements :

2

Mount :

Surface Mount

Max Power Dissipation :

900mW

Rise Time :

13ns

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Element Configuration :

Dual

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Weight :

230.4mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

1.7 V

Fall Time (Typ) :

5 ns

Operating Temperature :

-55°C~150°C TJ

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

30V

Current Rating :

3.7A

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Width :

4.05mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Pins :

8