NDS9400A

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Mfr.Part #
NDS9400A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 3.4A 8SOIC
Stock
12,208
In Stock :
12,208

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Termination :
SMD/SMT
Power Dissipation :
2.5W
Turn-Off Delay Time :
21 ns
Rise Time :
21ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
RoHS Status :
RoHS Compliant
Number of Elements :
1
Voltage - Rated DC :
-30V
Nominal Vgs :
-1.6 V
Rds On (Max) @ Id, Vgs :
130m Ω @ 1A, 10V
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
3.4A
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 10V
Drain to Source Breakdown Voltage :
-30V
Operating Temperature :
-55°C~150°C TJ
FET Type :
P-Channel
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
3.4A Ta
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Row Spacing :
6.3 mm
Number of Pins :
8
Published :
1998
Dual Supply Voltage :
-30V
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Packaging :
Tape and Reel (TR)
Width :
4.05mm
Current Rating :
-3.6A
Power Dissipation-Max :
2.5W Ta
Fall Time (Typ) :
8 ns
Datasheets
NDS9400A
Introducing Transistors - FETs, MOSFETs - Single onsemi NDS9400A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, NDS9400A pinout, NDS9400A datasheet PDF, NDS9400A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDS9400A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS9400A


P-Channel Tape & Reel (TR) 130m Ω @ 1A, 10V ±20V 350pF @ 10V 25nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

NDS9400A Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 10V.This device conducts a continuous drain current (ID) of 3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

NDS9400A Features


a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 21 ns
a 30V drain to source voltage (Vdss)


NDS9400A Applications


There are a lot of ON Semiconductor
NDS9400A applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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