NDS9407

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Voltage - Rated DC :

-60V

Number of Pins :

8

Turn On Delay Time :

8 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Pbfree Code :

yes

Mount :

Surface Mount

Published :

2002

Power Dissipation :

2.5W

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

150m Ω @ 3A, 10V

Turn-Off Delay Time :

10 ns

FET Type :

P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Dual Supply Voltage :

60V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Rise Time :

11ns

Terminal Position :

Dual

Number of Terminations :

8

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Weight :

130mg

Threshold Voltage :

-1.6V

Current Rating :

-3.3A

Height :

1.5mm

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-3A

Input Capacitance (Ciss) (Max) @ Vds :

732pF @ 30V

Factory Lead Time :

11 Weeks

Nominal Vgs :

-1.6 V

Drain Current-Max (Abs) (ID) :

3A

ECCN Code :

EAR99

Length :

5mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

-60V

Operating Temperature :

-55°C~175°C TJ

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Power Dissipation-Max :

2.5W Ta

JESD-609 Code :

e3

Contact Plating :

Tin

REACH SVHC :

No SVHC