NDS9952A

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Mfr.Part #
NDS9952A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 30V 3.7/2.9A 8SOIC
Stock
22,668
In Stock :
22,668

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
3.7A 2.9A
Terminal Finish :
Tin (Sn)
Rise Time :
21ns
Number of Pins :
8
Mount :
Surface Mount
Mounting Type :
Surface Mount
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Transistor Element Material :
SILICON
Nominal Vgs :
1.7 V
Number of Terminations :
8
Element Configuration :
Dual
Packaging :
Tape and Reel (TR)
Number of Elements :
2
Current Rating :
2.9A
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Fall Time (Typ) :
8 ns
Drain to Source Breakdown Voltage :
30V
ECCN Code :
EAR99
Weight :
230.4mg
Turn-Off Delay Time :
21 ns
FET Feature :
Logic Level Gate
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
80m Ω @ 1A, 10V
Threshold Voltage :
1.7V
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
2.8V @ 250μA
Continuous Drain Current (ID) :
3.7A
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
900mW
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Resistance :
80mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
320pF @ 10V
Lead Free :
Lead Free
Radiation Hardening :
No
FET Type :
N and P-Channel
Operating Temperature :
-55°C~150°C TJ
Termination :
SMD/SMT
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Power Dissipation :
2W
Factory Lead Time :
18 Weeks
Dual Supply Voltage :
30V
Pbfree Code :
yes
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
15A
Datasheets
NDS9952A
Introducing Transistors - FETs, MOSFETs - Arrays onsemi NDS9952A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, NDS9952A pinout, NDS9952A datasheet PDF, NDS9952A amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi NDS9952A ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS9952A


NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

NDS9952A Description


These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.



NDS9952A Features


  • N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.

  • P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).

  • High density cell architecture or a very low RDS (ON).

  • a surface mount package with high power and current handling capacity.

  • Surface-mount MOSFET with dual (N and P) channels.



NDS9952A Applications


Switching applications


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