NDS9952A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Threshold Voltage :

1.7V

FET Type :

N and P-Channel

Nominal Vgs :

1.7 V

Continuous Drain Current (ID) :

3.7A

Number of Elements :

2

JESD-609 Code :

e3

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

15A

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

21ns

Current Rating :

2.9A

Current - Continuous Drain (Id) @ 25°C :

3.7A 2.9A

Factory Lead Time :

18 Weeks

Element Configuration :

Dual

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

21 ns

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Dual Supply Voltage :

30V

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Resistance :

80mOhm

Rds On (Max) @ Id, Vgs :

80m Ω @ 1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Max Power Dissipation :

900mW

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Weight :

230.4mg

Fall Time (Typ) :

8 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.8V @ 250μA