NDS9952A
- Mfr.Part #
- NDS9952A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 3.7/2.9A 8SOIC
- Stock
- 22,668
- In Stock :
- 22,668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A 2.9A
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 21ns
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 1.7 V
- Number of Terminations :
- 8
- Element Configuration :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Current Rating :
- 2.9A
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 8 ns
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Weight :
- 230.4mg
- Turn-Off Delay Time :
- 21 ns
- FET Feature :
- Logic Level Gate
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 1A, 10V
- Threshold Voltage :
- 1.7V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Continuous Drain Current (ID) :
- 3.7A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 900mW
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 80mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 10V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- FET Type :
- N and P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 2W
- Factory Lead Time :
- 18 Weeks
- Dual Supply Voltage :
- 30V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 15A
- Datasheets
- NDS9952A

NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
-
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
-
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
-
High density cell architecture or a very low RDS (ON).
-
a surface mount package with high power and current handling capacity.
-
Surface-mount MOSFET with dual (N and P) channels.
NDS9952A Applications
Switching applications
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