NDS9948
- Mfr.Part #
- NDS9948
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 60V 2.3A 8-SOIC
- Stock
- 42
- In Stock :
- 42
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 16 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rise Time :
- 9ns
- Number of Terminations :
- 8
- Length :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 187mg
- Drain to Source Breakdown Voltage :
- -60V
- Continuous Drain Current (ID) :
- 2.3A
- Input Capacitance (Ciss) (Max) @ Vds :
- 394pF @ 30V
- Turn On Delay Time :
- 6 ns
- Operating Temperature :
- -55°C~175°C TJ
- Max Power Dissipation :
- 2W
- FET Feature :
- Logic Level Gate
- Number of Elements :
- 2
- Power Dissipation :
- 2W
- Width :
- 4mm
- Threshold Voltage :
- -1.5V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- -1.5 V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Power - Max :
- 900mW
- Height :
- 1.5mm
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 10A
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 3 ns
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 2.3A, 10V
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -60V
- Avalanche Energy Rating (Eas) :
- 15 mJ
- Published :
- 2002
- Drain to Source Voltage (Vdss) :
- 60V
- Current Rating :
- -2.3A
- JESD-609 Code :
- e3
- Element Configuration :
- Dual
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- FET Type :
- 2 P-Channel (Dual)
- Datasheets
- NDS9948

NDS9948 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9948 Description
This P-channel MOSFET is a rugged gate version of on Semiconductor's advanced power trench process. It is optimized for power management applications that require a wide range of gate drive rated voltages (4.5V-20V).
NDS9948 Applications
? Power management
? Load switch
? Battery protection
NDS9948 Features
? –2.3 A, –60 V RDS(ON) = 250 m? @ VGS = –10 V
RDS(ON) = 500 m? @ VGS = –4.5 V
? Low gate charge (9nC typical)
? Fast switching speed
? High performance trench technology for extremely
low RDS(ON)
? High power and current handling capability
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