NDS9933A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Power - Max :

900mW

JESD-30 Code :

R-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Rds On (Max) @ Id, Vgs :

140m Ω @ 2.8A, 4.5V

FET Feature :

Logic Level Gate

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

2.8A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Pin Count :

8

Drain Current-Max (Abs) (ID) :

2.8A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Terminal Finish :

MATTE TIN

FET Type :

2 P-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.14Ohm

Pulsed Drain Current-Max (IDM) :

10A

Number of Elements :

2

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260