NDS9933

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Power - Max :

900mW

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

140m Ω @ 2.8A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

10A

Number of Elements :

2

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.14Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.8A

Current - Continuous Drain (Id) @ 25°C :

2.8A

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V