MUN5335DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

2.2k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Min Operating Temperature :

-55°C

Published :

2007

Polarity :

NPN, PNP

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

yes

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Power Dissipation :

187mW

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

8 Weeks

Number of Pins :

6

Number of Terminations :

6

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Number of Elements :

2

Base Part Number :

MUN53**DW1

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

250mW

Resistor - Emitter Base (R2) :

47k Ω

Current Rating :

100mA

Pin Count :

6

hFE Min :

80

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.4