MUN5114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Current Rating :

-100mA

Max Collector Current :

100mA

Max Power Dissipation :

202mW

JESD-609 Code :

e3

Published :

2004

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Number of Terminations :

3

Voltage - Rated DC :

-50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Application :

SWITCHING

hFE Min :

80

HTS Code :

8541.21.00.95

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Operating Supply Voltage :

50V

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Min Operating Temperature :

-55°C

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

10 k Ω

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

PNP - Pre-Biased

Pin Count :

3

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

47 k Ω

Max Operating Temperature :

150°C

Base Part Number :

MUN51**T

Radiation Hardening :

No

Max Output Current :

100mA

Power Dissipation :

202mW

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3