MUN5114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

202mW

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Current Rating :

-100mA

Resistor - Base (R1) :

10 k Ω

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

3

Number of Terminations :

3

Transistor Type :

PNP - Pre-Biased

Number of Elements :

1

Halogen Free :

Halogen Free

Max Output Current :

100mA

hFE Min :

80

Power Dissipation :

202mW

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Polarity :

PNP

Radiation Hardening :

No

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Voltage - Rated DC :

-50V

Base Part Number :

MUN51**T

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Emitter Base (R2) :

47 k Ω

Continuous Collector Current :

100mA

HTS Code :

8541.21.00.95

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Current - Collector Cutoff (Max) :

500nA

Operating Supply Voltage :

50V