MUN5114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Element Configuration :

Single

Max Breakdown Voltage :

50V

hFE Min :

80

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

202mW

Current Rating :

-100mA

Base Part Number :

MUN51**T

Transistor Application :

SWITCHING

Voltage - Rated DC :

-50V

Surface Mount :

yes

Polarity :

PNP

Factory Lead Time :

5 Weeks

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Halogen Free :

Halogen Free

Number of Pins :

3

Published :

2004

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Max Output Current :

100mA

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Operating Supply Voltage :

50V

Number of Elements :

1

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

47 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

202mW

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

10 k Ω