MUN5114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Max Power Dissipation :

202mW

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Pbfree Code :

yes

Max Output Current :

100mA

Package / Case :

SC-70, SOT-323

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Published :

2004

Base Part Number :

MUN51**T

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Mounting Type :

Surface Mount

Power Dissipation :

202mW

Terminal Form :

Gull wing

Current Rating :

-100mA

Number of Pins :

3

Factory Lead Time :

5 Weeks

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Resistor - Base (R1) :

10 k Ω

Voltage - Rated DC :

-50V

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Transistor Type :

PNP - Pre-Biased

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

47 k Ω

Packaging :

Tape and Reel (TR)

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

HTS Code :

8541.21.00.95

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Element Configuration :

Single

Number of Elements :

1