MUN5113DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Max Collector Current :

100mA

Polarity :

PNP

Width :

1.25mm

Max Breakdown Voltage :

50V

Surface Mount :

yes

Transistor Application :

SWITCHING

Current Rating :

-100mA

Max Output Current :

100mA

Number of Elements :

2

Height :

900μm

Terminal Form :

Gull wing

Max Power Dissipation :

250mW

Continuous Collector Current :

-100mA

Lead Free :

Lead Free

Contact Plating :

Tin

Halogen Free :

Halogen Free

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain-Min (hFE) :

80

ECCN Code :

EAR99

Package / Case :

SOT-363-6

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

REACH SVHC :

No SVHC

JESD-609 Code :

e3

hFE Min :

80

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Pbfree Code :

yes

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

2mm

Number of Terminations :

6

Min Operating Temperature :

-55°C

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

50V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No