MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

202mW

Halogen Free :

Halogen Free

Max Power Dissipation :

202mW

Published :

2006

Resistor - Base (R1) :

10 k Ω

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Height :

900μm

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Surface Mount :

yes

hFE Min :

35

Width :

1.35mm

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Operating Supply Voltage :

50V

Number of Terminations :

3

Pbfree Code :

yes

Current Rating :

-100mA

Number of Pins :

3

Resistor - Emitter Base (R2) :

10 k Ω

Min Operating Temperature :

-55°C

Terminal Position :

Dual

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

PNP - Pre-Biased

Element Configuration :

Single

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

2.2mm

Max Output Current :

100mA

Pin Count :

3

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Collector Emitter Saturation Voltage :

250mV

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN51**T

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-70, SOT-323

Transistor Application :

SWITCHING

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V