MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Surface Mount :

yes

Polarity :

PNP

Voltage - Rated DC :

-50V

Number of Terminations :

3

Number of Elements :

1

Halogen Free :

Halogen Free

Power Dissipation :

202mW

Continuous Collector Current :

100mA

REACH SVHC :

No SVHC

Max Output Current :

100mA

hFE Min :

35

RoHS Status :

ROHS3 Compliant

Width :

1.35mm

Resistor - Base (R1) :

10 k Ω

ECCN Code :

EAR99

Operating Supply Voltage :

50V

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Length :

2.2mm

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

Published :

2006

Height :

900μm

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Lead Free :

Lead Free

Factory Lead Time :

5 Weeks

Base Part Number :

MUN51**T

Current Rating :

-100mA

Pin Count :

3

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Power Dissipation :

202mW

Collector Emitter Saturation Voltage :

250mV

Packaging :

Tape and Reel (TR)