MUN5111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Length :

2.2mm

Transistor Application :

SWITCHING

Width :

1.35mm

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

hFE Min :

35

Factory Lead Time :

5 Weeks

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

250mV

Number of Elements :

1

Mounting Type :

Surface Mount

Base Part Number :

MUN51**T

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Power Dissipation :

202mW

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Operating Supply Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Max Output Current :

100mA

Continuous Collector Current :

100mA

Published :

2006

Package / Case :

SC-70, SOT-323

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

Pin Count :

3

Element Configuration :

Single

Power Dissipation :

202mW

Number of Pins :

3

Resistor - Base (R1) :

10 k Ω

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Height :

900μm

JESD-609 Code :

e3

Max Collector Current :

100mA

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Current Rating :

-100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V

Contact Plating :

Tin

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)