MUN5113DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Voltage - Rated DC :

-50V

Max Power Dissipation :

250mW

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Height :

900μm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Contact Plating :

Tin

Transistor Application :

SWITCHING

Max Output Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

SOT-363-6

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Terminal Form :

Gull wing

Number of Terminations :

6

Max Breakdown Voltage :

50V

Number of Elements :

2

Polarity :

PNP

Length :

2mm

Number of Pins :

6

Published :

2009

Peak Reflow Temperature (Cel) :

260

DC Current Gain-Min (hFE) :

80

Current Rating :

-100mA

Element Configuration :

Dual

Min Operating Temperature :

-55°C

Continuous Collector Current :

-100mA

ECCN Code :

EAR99

hFE Min :

80

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Width :

1.25mm