MUN5114DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Terminal Form :

Gull wing

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Surface Mount :

yes

Element Configuration :

Dual

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.21

ECCN Code :

EAR99

Resistor - Base (R1) :

10k Ω

Max Breakdown Voltage :

50V

Contact Plating :

Tin

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Voltage - Rated DC :

-50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Polarity :

PNP

Max Collector Current :

100mA

Base Part Number :

MUN51**DW1T

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Continuous Collector Current :

-100mA

Current Rating :

-100mA

Power Dissipation :

250mW

Published :

2005

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Voltage (VCEO) :

50V