MUN5114DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.21

Halogen Free :

Halogen Free

Number of Elements :

2

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

ECCN Code :

EAR99

Resistor - Base (R1) :

10k Ω

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Voltage - Rated DC :

-50V

Factory Lead Time :

8 Weeks

Base Part Number :

MUN51**DW1T

Radiation Hardening :

No

Published :

2005

Transistor Type :

2 PNP - Pre-Biased (Dual)

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

hFE Min :

80

Polarity :

PNP

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Dual

Max Power Dissipation :

250mW

Number of Pins :

6

Continuous Collector Current :

-100mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Power Dissipation :

250mW

Surface Mount :

yes

Contact Plating :

Tin

Current Rating :

-100mA