MUN5335DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Surface Mount :

yes

JESD-609 Code :

e3

Base Part Number :

MUN53**DW1

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Resistor - Base (R1) :

2.2k Ω

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

50V

Max Output Current :

100mA

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Published :

2006

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current Rating :

100mA

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Number of Elements :

2

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Radiation Hardening :

No

Operating Supply Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Max Power Dissipation :

250mW

Resistor - Emitter Base (R2) :

47k Ω

hFE Min :

80

Pbfree Code :

yes

Pin Count :

6

Power Dissipation :

187mW

Terminal Form :

Gull wing