MUN5333DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

187mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Number of Terminations :

6

Resistor - Base (R1) :

4.7k Ω

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Max Power Dissipation :

250mW

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MUN53**DW1

hFE Min :

80

Number of Elements :

2

Operating Supply Voltage :

50V

Continuous Collector Current :

100mA

Radiation Hardening :

No

Lead Free :

Lead Free

Element Configuration :

Dual

Max Output Current :

100mA

Max Collector Current :

100mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Published :

2006

Max Operating Temperature :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

50V

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 10

Max Breakdown Voltage :

50V

Current Rating :

100mA

Contact Plating :

Tin

ECCN Code :

EAR99

Number of Pins :

6