MUN5332DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Current Rating :

100mA

RoHS Status :

RoHS Compliant

Resistor - Base (R1) :

4.7k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Element Configuration :

Dual

Published :

2012

Polarity :

NPN, PNP

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

4.7k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

JESD-609 Code :

e3

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MUN53**DW1

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

hFE Min :

15

Max Collector Current :

100mA

ECCN Code :

EAR99

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Number of Elements :

2

Max Power Dissipation :

250mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Power Dissipation :

187mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Factory Lead Time :

2 Weeks

Pin Count :

6