MUN5316DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Output Current :

100mA

Number of Terminations :

6

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MUN53**DW1

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Packaging :

Tape and Reel (TR)

hFE Min :

160

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Power Dissipation :

187mW

Resistor - Base (R1) :

4.7k Ω

Element Configuration :

Dual

Radiation Hardening :

No

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

250mW

Additional Feature :

BUILT-IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Min Operating Temperature :

-55°C

Contact Plating :

Tin

Number of Elements :

2

Polarity :

NPN, PNP

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Number of Pins :

6

Current Rating :

100mA

Voltage - Rated DC :

50V

Lead Free :

Lead Free

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V