MUN5315DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

JESD-609 Code :

e3

Number of Pins :

6

Pbfree Code :

yes

Number of Terminations :

6

Additional Feature :

BUILT-IN BIAS RESISTOR

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

hFE Min :

160

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Max Collector Current :

100mA

Power Dissipation :

187mW

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Base Part Number :

MUN53**DW1

Current Rating :

100mA

Max Power Dissipation :

250mW

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Max Output Current :

100mA

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

50V