MUN5314DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Base Part Number :

MUN53**DW1

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Max Breakdown Voltage :

50V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Current Rating :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 4.7

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

50V

hFE Min :

80

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Power Dissipation :

187mW

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Emitter Base (R2) :

47k Ω

Resistor - Base (R1) :

10k Ω

Pin Count :

6

Surface Mount :

yes

Continuous Collector Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Radiation Hardening :

No

Max Operating Temperature :

150°C

Max Power Dissipation :

250mW

RoHS Status :

ROHS3 Compliant

Polarity :

NPN, PNP

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Number of Pins :

6

Operating Supply Voltage :

50V

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Width :

1.25mm

Height :

900μm

Max Output Current :

100mA

Min Operating Temperature :

-55°C

Published :

2005

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)