MUN5312DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2006

Number of Channels :

2

Min Operating Temperature :

-55°C

Max Power Dissipation :

187mW

Factory Lead Time :

8 Weeks

hFE Min :

60

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

Resistor - Base (R1) :

22k Ω

Pin Count :

6

Base Part Number :

MUN53**DW1

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Length :

2mm

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

250mV

Power - Max :

250mW

REACH SVHC :

No SVHC

Width :

1.25mm

Height :

900μm

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Current Rating :

100mA

Resistor - Emitter Base (R2) :

22k Ω

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V