MUN5311DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Width :

1.25mm

Max Power Dissipation :

250mW

Polarity :

NPN, PNP

Length :

2mm

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Resistor - Base (R1) :

10k Ω

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

250mV

Voltage - Rated DC :

50V

hFE Min :

35

Power Dissipation :

187mW

Terminal Form :

Gull wing

Published :

2006

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.95

Continuous Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Number of Pins :

6

Radiation Hardening :

No

Current Rating :

100mA

Contact Plating :

Tin

REACH SVHC :

No SVHC

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Max Output Current :

100mA

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Height :

900μm

Max Breakdown Voltage :

50V

Base Part Number :

MUN53**DW1

Operating Supply Voltage :

50V

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Peak Reflow Temperature (Cel) :

260

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Collector Current :

100mA