MUN5237T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Surface Mount :

yes

Number of Terminations :

3

Power Dissipation :

202mW

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

JESD-609 Code :

e3

Factory Lead Time :

5 Weeks

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Base Part Number :

MUN52**T

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Continuous Collector Current :

100A

Published :

2009

Package / Case :

SC-70, SOT-323

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

1

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

hFE Min :

80

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Pre-Biased

Polarity :

NPN

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

202mW

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

22 k Ω

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

47 k Ω

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pin Count :

3