MUN5236DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Power Dissipation :

187mW

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Element Configuration :

Dual

Resistor - Base (R1) :

100k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Max Power Dissipation :

250mW

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2009

Current Rating :

100mA

Base Part Number :

MUN52**DW1T

Resistor - Emitter Base (R2) :

100k Ω

hFE Min :

80

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Pins :

6